AVIZA Technology, Inc.

Ion Beam Deposition System

Designed with high productivity in mind, the StratIon fxP 200mm/300mm cluster system uses ion beam processing technology to produce metal and dielectric thin films to meet the needs of MRAM, CMOS metal gate and hard disk drive manufacturers.

Low pressure ion beam deposition provides ultra-smooth films with exceptional uniformity and sub-Angstrom thickness precision. Key applications include magnetic tunnel junction (MTJ) deposition for MRAM and hard disk drive read heads, plus metal gate deposition for advanced CMOS.

Platform

The StratIon fxP is an ion beam processing cluster system designed to deposit thin metal and dielectric films with unrivalled precision, uniformity and smoothness. The system is unique in being the only ion beam system designed for 300-mm wafer manufacturing, and to meet the productivity needs of silicon wafer fabs. The StratIon fxP can be configured with a pre-clean chamber, an oxidation chamber and two deposition chambers, all within the smallest footprint.

Key Features
  • 200/300mm bridge system
  • 2 ion beam deposition chambers
  • Ion beam pre-clean and oxidation chambers
  • Aviza's patented 300mm ion beam source
  • Accepts Aviza ALD, PVD and MOCVD chambers
Deposition Chamber
  • 8 targets per chamber
  • <1E-4 Torr deposition pressure
  • <4ms beam on-off for film thickness precision
  • Wafer tilt and rotation for uniformity optimisation
  • Magnetic field projector
  • Reactive deposition - binary and tertiary alloys
Pre-Clean and Oxidation Chambers
  • Ultra-soft ion beam oxidation - mWatts cm-2
  • 'Plasma' oxidation
  • Natural oxidation
System Benefits
  • <2Å rms roughness
  • <0.1Å nominal thickness control
  • <0.5% thickness non-uniformity
  • <0.5% oxidation non-uniformity
  • Homogeneous thin films
  • Low damage - no plasma strike exposure
  • Smallest footprint of any MTJ deposition system
Magnetic Tunnel Junctions for MRAM and Hard Disk Drive Read Heads

MRAM is a non-volatile memory technology with the potential to replace existing volatile and non-volatile technologies such as DRAM, SRAM and flash memory. MRAM can be easily integrated into CMOS copper interconnect and so lends itself to embedded, as well as discrete implementation

Whereas flash memory and DRAM are based on electrical charge storage, the MRAM storage element is based on programmable magnetic alignment-a phenomenon called tunnelling magneto-resistance (TMR). The storage cell itself is called a magnetic tunnel junction (MTJ) and conceptually consists of two magnetic layers, a 'fixed' layer and a 'free' layer, separated by a thin dielectric 'tunnel' barrier. The same MTJ technology is also used in hard disk drive read heads.

Magnetic Tunnel Junction - Smoothness



  • Deposition pressure 10X lower than conventional PVD
  • ≤2Å rms roughness on MTJ half-stacks








  • X-TEM of 9 layer stack
  • Excellent interfacial smoothness



CMOS Metal Gates - Control

  • Binary and tertiary alloys by reactive ion beam deposition
  • Low damage
  • Nano-lamination for compositional variation- work function control


TiAlN with 2Å rms roughness